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Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C

Abstract : For CMOS processing compatibility, hybrid bonding of III-V materials on Silicon should be operated below 300°C, requiring an interfacial layer as thin as possible in order not to hamper the electrical transport through the interface. Both SiO 2 and ZnO interfacial layers have been investigated in the case of n-InP/n-Si hybrid heterostructures. Efficient electrical transport through oxide-mediated bonded InP/Si heterostructures is demonstrated, related to tunneling through the oxide-interfacial layer. These electrically-operated oxide-interfacial-layer heterostructures provide both efficient bonding processing and open the field for full 3D design and operation of optoelectronic devices.
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https://hal.archives-ouvertes.fr/hal-02947179
Contributor : Anne Talneau Connect in order to contact the contributor
Submitted on : Monday, December 14, 2020 - 4:56:11 PM
Last modification on : Wednesday, November 3, 2021 - 4:26:26 AM
Long-term archiving on: : Monday, March 15, 2021 - 6:11:51 PM

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Anne Talneau, Grégoire Beaudoin, Gilles Patriarche, Frédérique Ducroquet. Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C. physica status solidi (a), Wiley, 2020, pp.2000317. ⟨10.1002/pssa.202000317⟩. ⟨hal-02947179⟩

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