A New Embedded Measurement Structure for eDRAM Capacitor

L. Lopez (1) , Jean-Michel Portal (1) , D. Nee (2)

1 L2MP - Laboratoire matériaux et microélectronique de Provence
2 ST-ROUSSET - STMicroelectronics [Rousset]

The embedded DRAM (eDRAM) is more and more used in System On Chip (SOC). The integration of the DRAM capacitor process into a logic process is challenging to get satisfactory yields. The specific process of DRAM capacitor and the low capacitance value (~30F) of this device induce problems of process monitoring and failure analysis. We propose a new test structure to measure the capacitance value of each DRAM cell capacitor in a DRAM array. This concept has been validated by simulation on a 0.18µm eDRAM technology.

Domaines: Architectures Matérielles [cs.AR]; Electronique

L. Lopez, Jean-Michel Portal, D. Nee. A New Embedded Measurement Structure for eDRAM Capacitor. DATE'05, Mar 2005, Munich, Germany. pp.462-463. ⟨hal-00181649⟩