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Article Dans Une Revue Applied Physics Letters Année : 2018

Resistive switching and charge transport mechanisms in ITO/ZnO/ p -Si devices

Résumé

The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area.
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Dates et versions

hal-01913127 , version 1 (06-11-2018)

Identifiants

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O. Blázquez, J. Frieiro, J. López-Vidrier, C. Guillaume, X. Portier, et al.. Resistive switching and charge transport mechanisms in ITO/ZnO/ p -Si devices. Applied Physics Letters, 2018, 113 (18), ⟨10.1063/1.5046911⟩. ⟨hal-01913127⟩
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