Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

Abstract : Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits.
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Contributor : You Wang <>
Submitted on : Thursday, May 19, 2016 - 9:37:02 PM
Last modification on : Thursday, October 17, 2019 - 12:36:09 PM



You Wang, Hao Cai, Naviner Lirida, Yue Zhang, Zhao Xiaoxuan, et al.. Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.1762 - 1767. ⟨10.1109/TED.2016.2533438⟩. ⟨hal-01318736⟩



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