Laser testing of a double-access BBICS architecture with improved SEE detection capabilities

Clément Champeix (1) , Jean-Max Dutertre (1) , Vincent Pouget (2, 3) , Bruno Robisson (1) , Mathieu Lisart (4) , Nicolas Borrel (5) , Alexandre Sarafianos (6)

1 SAS-ENSMSE - Département Systèmes et Architectures Sécurisés
2 IES - Institut d’Electronique et des Systèmes
3 RADIAC - Radiations et composants
4 ST-ROUSSET - STMicroelectronics [Rousset]
5 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
6 STMicroelectronics

The paper reports the experimental validation of a new Bulk Built-In Current Sensor (BBICS) designed and implemented in a 40nm CMOS technology. The double-access architecture provides improved SEE detection as confirmed by laser experiments.

Mots clés: Laser fault injection; SEE detection; Bulk Built-In Current Sensor; Radiation-hardening by design; Single-Event Effects

Domaines: Micro et nanotechnologies/Microélectronique

Clément Champeix, Jean-Max Dutertre, Vincent Pouget, Bruno Robisson, Mathieu Lisart, et al.. Laser testing of a double-access BBICS architecture with improved SEE detection capabilities. 2016 16th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2016, Bremen, Germany. ⟨10.1109/RADECS.2016.8093172⟩. ⟨emse-01855833⟩